A research collaboration led by Osaka University has successfully synthesized ultrathin vanadium dioxide films on a flexible substrate while maintaining the material's unique electrical properties. The findings were recently published in *Applied Physics Express*.
Vanadium dioxide is widely recognized for its ability to switch between conductive and insulating states at nearly room temperature, a property that makes it highly desirable for adaptive electronic applications. However, achieving extremely thin films of this material without compromising its electrical performance has posed a major challenge.
"When a film is grown on a rigid substrate, the strong surface interactions can distort its atomic structure, which negatively impacts conductivity," explains Boyuan Yu, the study's lead author.
To address this issue, the researchers utilized two-dimensional hexagonal boron nitride (hBN) as a substrate. Unlike conventional rigid bases, hBN is a highly stable soft material that does not form strong chemical bonds with oxides, allowing the vanadium dioxide layer to retain its optimal structure.
"The outcome was remarkable," says senior author Hidekazu Tanaka. "Using this flexible substrate, the material's structural integrity remains nearly intact."
Through precise spectroscopy analysis, the team confirmed that the vanadium dioxide layers retained their characteristic phase transition temperature even at a minimal thickness of 12 nanometers.
"This discovery enhances our ability to precisely manipulate quantum materials for practical applications," Yu notes. "With improved control over the phase transition process, we can now fine-tune these materials for sensors, flexible electronics, and other emerging technologies."
Given the critical role that quantum materials like vanadium dioxide play in next-generation microdevices, this breakthrough could enable the development of adaptable, high-performance electronics that integrate seamlessly into various environments. The research team is now exploring further innovations, including even thinner films and advanced substrate materials.
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