Sandwiching two-dimensional materials used in nanoelectronic devices between their three-dimensional silicon bases and an ultrathin layer of aluminum oxide can significantly reduce the risk of component failure due to overheating, according to a new study published in the journal of Advanced Materials led by researchers at the University of Illinois at Chicago College of Engineering.

Many of today's silicon-based electronic components contain 2D materials such as graphene. Incorporating 2D materials like graphene - which is composed of a single-atom-thick layer of carbon atoms - into these components allows them to be several orders of magnitude smaller than if they were made with conventional, 3D materials.

In addition, 2D materials also enable other unique functionalities. But nanoelectronic components with 2D materials have an Achilles' heel - they are prone to overheating. This is because of poor heat conductance from 2D materials to the silicon base.

"In the field of nanoelectronics, the poor heat dissipation of 2D materials has been a bottleneck to fully realizing their potential in enabling the manufacture of ever-smaller electronics while maintaining functionality," said Amin Salehi-Khojin, associate professor of mechanical and industrial engineering in UIC's College of Engineering.

One of the reasons 2D materials can't efficiently transfer heat to silicon is that the interactions between the 2D materials and silicon in components like transistors are rather weak.

"Bonds between the 2D materials and the silicon substrate are not very strong, so when heat builds up in the 2D material, it creates hot spots causing overheat and device failure," explained Zahra Hemmat, a graduate student in the UIC College of Engineering and co-first author of the paper.

In order to enhance the connection between the 2D material and the silicon base to improve heat conductance away from the 2D material into the silicon, engineers have experimented with adding an additional ultra-thin layer of material on top of the 2D layer - in effect creating a "nano-sandwich" with the silicon base and ultrathin material as the "bread."

"By adding another 'encapsulating' layer on top of the 2D material, we have been able to double the energy transfer between the 2D material and the silicon base," Salehi-Khojin said.

Salehi-Khojin and his colleagues created an experimental transistor using silicon oxide for the base, carbide for the 2D material and aluminum oxide for the encapsulating material. At room temperature, the researchers saw that the conductance of heat from the carbide to the silicon base was twice as high with the addition of the aluminum oxide layer versus without it.

"While our transistor is an experimental model, it proves that by adding an additional, encapsulating layer to these 2D nanoelectronics, we can significantly increase heat transfer to the silicon base, which will go a long way towards preserving functionality of these components by reducing the likelihood that they burn out," said Salehi-Khojin. "Our next steps will include testing out different encapsulating layers to see if we can further improve heat transfer."

Research paper

Related Links
University of Illinois at Chicago
Computer Chip Architecture, Technology and Manufacture
Nano Technology News From SpaceMart.com

Tweet

Thanks for being here; We need your help. The SpaceDaily news network continues to grow but revenues have never been harder to maintain. With the rise of Ad Blockers, and Facebook - our traditional revenue sources via quality network advertising continues to decline. And unlike so many other news sites, we don't have a paywall - with those annoying usernames and passwords. Our news coverage takes time and effort to publish 365 days a year. If you find our news sites informative and useful then please consider becoming a regular supporter or for now make a one off contribution.
SpaceDaily Contributor $5 Billed Once credit card or paypal		SpaceDaily Monthly Supporter $5 Billed Monthly paypal only

Graphene enables clock rates in the terahertz range
Dresden, Germany (SPX) Sep 11, 2018
Graphene - an ultrathin material consisting of a single layer of interlinked carbon atoms - is considered a promising candidate for the nanoelectronics of the future. In theory, it should allow clock rates up to a thousand times faster than today's silicon-based electronics. Scientists from the Helmholtz Zentrum Dresden-Rossendorf (HZDR) and the University of Duisburg-Essen (UDE), in cooperation with the Max Planck Institute for Polymer Research (MPI-P), have now shown for the first time that grap ... read more