Hynix's Mobile DRAMs are designed to meet the memory requirements of feature-rich portable applications that demand high memory density, high throughput and very low power dissipation features in a small form factor package.

The product is also the industry's first commercially available 1Gb mobile DRAM built on Hynix's 66 nm process technology. The finer processing geometry reduces die size but also improves speed and power characteristics of the device.

It operates at a maximum clock speed of 200MHz resulting in a throughput of up to 1.6 Gbytes of data per second with a 32-bit I/O - the fastest in the industry. The product consumes very low power, under worst case conditions, extending battery life in a wide range of portable electronic devices.

The 1Gb Mobile DRAM is one product in Hynix's family of 'One Chip Solutions' that combine SDRAM/DDR DRAM interfaces, and x16/x32 organizations on a single chip, allowing Hynix the flexibility of offering wire bonded options to meet the specific needs of the customer.

Hynix plans to begin mass production from the first quarter of 2008. The product will be available as 'NAND flash Multi-Chip Package (NAND MCP)', which combines DRAM and NAND flash in a single package, or 'package-on-package (POP)'stack. It will also be offered as 'KGD (Known Good Die)' for System in Package (SIP) applications.

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